L6563S datasheet(13/42 Pages) STMICROELECTRONICS

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L6563S

Electrical characteristics

Doc ID 16116 Rev 3

13/42

VZCDA

Arming voltage

(positive-going edge)

1.1

1.4

1.9

VZCDT

Triggering voltage

(negative-going edge)

0.5

0.7

0.9

IZCDb

Input bias current

VZCD = 1 to 4.5 V

µA

IZCDsrc

Source current capability

-2.5

-4

IZCDsnk

Sink current capability

2.5

Tracking boost function

ΔV

Dropout voltage VVFF-VTBO

ITBO = 0.2 mA

-20

ITBO

Linear operation

0.2

IINV-ITBO current mismatch

ITBO = 25 µA to 0.2mA

-5.5

+1.0

IINV-ITBO current mismatch

ITBO = 25 µA to 0.2mA

TJ = 25 °C

-4.0

VTBOclamp Clamp voltage

(3) V

VFF = 4 V

2.9

3.1

ITBO_Pull

Pull-up current

VTBO = 1 V

VFF = VMULT = 0 V

μA

PWM_STOP

Ileak

High level leakage current

VPWM_STOP = Vcc

µA

Low level

IPWM_STOP = 0.5 mA

RUN function

IRUN

Input bias current

VRUN = 0 to 3 V

-1

µA

VDIS

Disable threshold

(3) voltage falling

0.745

0.8

0.855

VEN

Enable threshold

(3) voltage rising

0.845 0.88 0.915

Start-up timer

tSTART_DEL Start-up delay

First cycle after wake-up

µs

tSTART

Timer period

150

300

µs

Restart after VCS > VCS_th

150

300

600

Voltage feedforward

VVFF

Linear operation range

0.8

ΔV

Dropout VMULTpk-VVFF

Vcc < VccOn

800

Vcc > or = to VccOn

ΔVVFF

Line drop detection threshold

Below peak value

100

ΔVVFF

Line drop detection threshold

Below peak value

TJ = 25 °C

Table 4.

Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ. Max. Unit

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