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L6563S 数据表(PDF) 14 Page - STMicroelectronics |
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L6563S 数据表(HTML) 14 Page - STMicroelectronics |
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14 / 42 page ![]() Electrical characteristics L6563S 14/42 Doc ID 16116 Rev 3 RDISCH Internal discharge resistor TJ = 25 °C 7.5 10 12.5 k Ω 520 VVFF Linear operation range 0.8 3 V PWM_LATCH Ileak Low level leakage current VPWM_LATCH = 0 -1 µA VH High level IPWM_LATCH = -0.5 mA 4.5 V VH High level IPWM_LATCH = -0.25 mA Vcc = VccOff 2.5 V VH High level IPWM_LATCH = -0.25 mA Vcc = VccOff TJ = 25 °C 2.8 V Gate driver VOL Output low voltage Isink = 100 mA 0.6 1.2 V VOH Output high voltage Isource = 5 mA 9.8 10.3 V Isrcpk Peak source current -0.6 A Isnkpk Peak sink current 0.8 A tf Voltage fall time 30 60 ns tr Voltage rise time 45 110 ns VOclamp Output clamp voltage Isource = 5 mA; Vcc = 20 V 10 12 15 V UVLO saturation Vcc= 0 to VCCon, Isink = 2 mA 1.1 V 1. Parameters tracking each other 2. The multiplier output is given by: 3. Parameters tracking each other Table 4. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit ( ) 2 VFF V 5 . 2 COMP V MULT V K V cs V M CS_Ofst − ⋅ ⋅ + = |
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