MPR121

Sensors

8

Freescale Semiconductor

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the

limits specified in Table 2 may affect device reliability or cause permanent damage to the device. For functional operating

conditions, refer to the remaining tables in this section. This device contains circuitry protecting against damage due to high static

voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher

than maximum-rated voltages to this high-impedance circuit.

ESD AND LATCH-UP PROTECTION CHARACTERISTICS

Normal handling precautions should be used to avoid exposure to static discharge.

Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels of static without

suffering any permanent damage. During the device qualification ESD stresses were performed for the Human Body Model

(HBM), the Machine Model (MM) and the Charge Device Model (CDM).

A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete

DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot

temperature, unless specified otherwise in the device specification.

Rating

Symbol

Value

Unit

Supply Voltage

-0.3 to +3.6

V

Supply Voltage

-0.3 to +2.75

V

Input Voltage

SCL, SDA, IRQ

V

Operating Temperature Range

-40 to +85

°C

GPIO Source Current per Pin

12

mA

GPIO Sink Current per Pin

1.2

mA

Storage Temperature Range

-40 to +125

°C

Table 3. ESD and Latch-up Test Conditions

Rating

Symbol

Value

Unit

Human Body Model (HBM)

±2000

V

Machine Model (MM)

±200

V

Charge Device Model (CDM)

±500

V

±100

mA