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RRL035P03 数据表(PDF) 2 Page - Rohm |
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RRL035P03 数据表(HTML) 2 Page - Rohm |
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2 / 6 page ![]() RRL035P03 Electrical characteristics (Ta = 25 C) Symbol Min. Typ. Max. Unit Gate-source leakage IGSS -- 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 30 - - V ID=1mA, VGS=0V Zero gate voltage drain current IDSS -- 1 AVDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA -36 50 ID=3.5A, VGS=10V -52 72 ID=1.7A, VGS=4.5V -58 81 ID=1.7A, VGS=4.0V Forward transfer admittance l Yfs l 2.3 - - S ID=3.5A, VDS=10V Input capacitance Ciss - 800 - pF VDS=10V Output capacitance Coss - 120 - pF VGS=0V Reverse transfer capacitance Crss - 110 - pF f=1MHz Turn-on delay time td(on) -7 - ns ID=1.7A, VDD 15V Rise time tr -9 - ns VGS=10V Turn-off delay time td(off) - 75 - ns RL=8.8 Fall time tf - 40 - ns RG=10 Total gate charge Qg - 8.0 - nC ID=3.5A, VDD 15V Gate-source charge Qgs - 2.5 - nC VGS=5V RL=4.3 Gate-drain charge Qgd - 3.0 - nC RG=10 *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Symbol Min. Typ. Max. Unit Forward Voltage VSD -- 1.2 V Is=3.5A, VGS=0V *Pulsed Conditions Conditions m Parameter Parameter Static drain-source on-state resistance RDS (on) * * * * * * * * * * 2/5 2010.04 - Rev.A Data Sheet www.rohm.com ©20 10 ROHM Co., Ltd. All rights reserved. |
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