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RRL035P03 数据表(PDF) 1 Page - Rohm |
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RRL035P03 数据表(HTML) 1 Page - Rohm |
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1 / 6 page ![]() 4V Drive Pch MOSFET RRL035P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET Features 1) Low On-resistance. 2) High speed switching. Application Switching Packaging specifications Inner circuit Package Taping Code TR Basic ordering unit (pieces) 3000 RRL035P03 ○ Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 3.5 A Pulsed IDP 14 A Continuous IS 0.8 A Pulsed ISP 14 A Power dissipation PD 1W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw 10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Symbol Limits Unit Channel to Ambient Rth (ch-a) 125 C / W *Mounted on a ceramic board. Parameter Type Source current (Body Diode) Drain current Parameter * (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain ∗ 1 ESD PROTECTION DIODE ∗ 2 BODY DIODE TUMT6 Abbreviated symbol :UF *2 *1 *1 ∗2 ∗1 (6) (1) (5) (2) (4) (3) 1/5 2010.04 - Rev.A www.rohm.com ©20 10 ROHM Co., Ltd. All rights reserved. |
类似零件编号 - RRL035P03 |
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类似说明 - RRL035P03 |
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