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ADT7461ARMZ-R7 数据表(PDF) 16 Page - ON Semiconductor |
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ADT7461ARMZ-R7 数据表(HTML) 16 Page - ON Semiconductor |
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16 / 20 page ![]() ADT7461 http://onsemi.com 16 Figure 21. Operation of the THERM and THERM2 Interrupts THERM2 1 3 2 4 THERM LIMIT THERM2 LIMIT TEMPERATURE THERM 90°C 80°C 70°C 60°C 50°C 40°C 30°C 1. When the THERM2 limit is exceeded, the THERM2 signal asserts low. 2. If the temperature continues to increase and exceeds the THERM limit, the THERM output asserts low. 3. The THERM output deasserts (goes high) when the temperature falls to THERM limit minus hysteresis. No hysteresis value is shown in Figure 21. 4. As the system continues to cool and the temperature falls below the THERM2 limit, the THERM2 signal resets. Again, no hysteresis value is shown for THERM2. Both the external and internal temperature measurements cause THERM and THERM2 to operate as described. Application Information Noise Filtering For temperature sensors operating in noisy environments, the industry standard practice was to place a capacitor across the D+ and D− pins to help combat the effects of noise. However, large capacitances affect the accuracy of the temperature measurement, leading to a recommended maximum capacitor value of 1,000 pF. While this capacitor reduces the noise, it does not eliminate it, making it difficult to use the sensor in a very noisy environment. The ADT7461 has a major advantage over other devices for eliminating the effects of noise on the external sensor. The series resistance cancellation feature allows a filter to be constructed between the external temperature sensor and the part. The effect of any filter resistance seen in series with the remote sensor is automatically cancelled from the temperature result. The construction of a filter allows the ADT7461 and the remote temperature sensor to operate in noisy environments. Figure 22 shows a low-pass R-C-R filter with the following values: R = 100 W and C = 1 nF This filtering reduces both common-mode noise and differential noise. Figure 22. Filter Between Remote Sensor and ADT7461 Factors Affecting Diode Accuracy D+ 1nF 100Ω REMOTE TEMPERATURE SENSOR D– 100Ω Remote Sensing Diode The ADT7461 is designed to work with substrate transistors built into processors or with discrete transistors. Substrate transistors are generally PNP types with the collector connected to the substrate. Discrete types can be either PNP or NPN transistor connected as a diode (base-shorted to collector). If an NPN transistor is used, the collector and base are connected to D+ and the emitter to D−. If a PNP transistor is used, the collector and base are connected to D− and the emitter to D+. To reduce the error due to variations in both substrate and discrete transistors, several factors should be taken into consideration: • The ideality factor, nF, of the transistor is a measure of the deviation of the thermal diode from ideal behavior. The ADT7461 is trimmed for an nF value of 1.008. The following equation may be used to calculate the error introduced at a temperature T ( °C), when using a transistor whose nF does not equal 1.008. Consult the processor data sheet for the nF values. DT = (nF − 1.008)/1.008 x (273.15 Kelvin + T) To factor this in, the user can write the DT value to the offset register. It is then automatically added to or subtracted from the temperature measurement by the ADT7461. • Some CPU manufacturers specify the high and low current levels of the substrate transistors. The high current level of the ADT7461, IHIGH, is 96 mA, and the low level current, ILOW, is 6 mA. If the ADT7461 current levels do not match the current levels specified by the CPU manufacturer, it may become necessary to remove an offset. The CPUs data sheet advises whether this offset needs to be removed and how to calculate it. This offset may be programmed to the offset register. It is important to note that if more than one offset must be considered, the algebraic sum of these offsets must be programmed to the offset register. If a discrete transistor is being used with the ADT7461, the best accuracy is obtained by choosing devices according to the following criteria: • Base-emitter voltage greater than 0.25 V at 6 mA, at the highest operating temperature. • Base-emitter voltage less than 0.95 V at 100 mA, at the lowest operating temperature. • Base resistance less than 100 W. • Small variation in hFE (50 to 150) that indicates tight control of VBE characteristics. Transistors, such as the 2N3904, 2N3906, or equivalents in SOT-23 packages are suitable devices to use. |
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