BAS28 datasheet(6/12 Pages) NXP

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BAS28

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Product data sheet

Rev. 3 — 22 July 2010

6 of 12

NXP Semiconductors

BAS28

High-speed double diode

Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

(1) IR =1mA

Fig 6.

Reverse recovery time test circuit and waveforms

Fig 7.

Forward recovery voltage test circuit and waveforms

trr

(1)

+ IF

output signal

10 %

90 %

input signal

V = VR + IF × RS

RS = 50 Ω

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

10 %

90 %

input signal

RS = 50 Ω

Ri = 50 Ω

OSCILLOSCOPE

1 k

450

D.U.T.

mga882

VFR

output signal

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