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BAS28 数据表(PDF) 1 Page - NXP Semiconductors |
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BAS28 数据表(HTML) 1 Page - NXP Semiconductors |
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1 / 12 page  1. Product profile 1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not connected. 1.2 Features and benefits High switching speed: trr ≤ 4ns Reverse voltage: VR ≤ 75 V Repetitive peak reverse voltage: VRRM ≤ 85 V Repetitive peak forward current: IFRM ≤ 500 mA AEC-Q101 qualified Small SMD package 1.3 Applications High-speed switching in e.g. surface-mounted circuits 1.4 Quick reference data [1] Device mounted on an FR4 Printed-Circuit Board (PCB). [2] When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA. BAS28 High-speed double diode Rev. 3 — 22 July 2010 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode IF forward current [1] -- 215 mA IR reverse current VR =75V - - 1 μA VR reverse voltage - - 75 V trr reverse recovery time [2] -- 4 ns |
类似零件编号 - BAS28 |
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类似说明 - BAS28 |
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