2-2
RF2103P
Rev B1 010720
2
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +7.5
VDC
Power Down Voltage (VPD)-0.5 to +5
V
DC Supply Current
350
mA
Input RF Power
+12
dBm
Output Load VSWR
10:1
Operating Case Temperature
-40 to +100
°C
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 °C, VCC=5.8V, VPD=5.0V,
ZLOAD=18Ω,PIN=0dBm, Freq=915MHz
Frequency Range
450 to 1000
MHz
Maximum Output Power
+28.8
dBm
VCC=7.5V
Maximum Output Power
+26.5
dBm
VCC=5.8V
Second Harmonic
-24
dBc
Without external second harmonic trap
Third Harmonic
-30
dBc
Output Noise Power
<-125
dBm/Hz
Input Impedance
50
Ω
With external matching network; see appli-
cation schematic
Input VSWR
<2:1
With external matching network; see appli-
cation schematic
Output Impedance
18+j0
Ω
Load Impedance for Optimal Match
Nominal 5.8V
Configuration
VCC=5.8V, VPD=4.0V, ZLOAD=18Ω,
PIN=0dBm, Freq=830MHz
Linear Power Gain
31
dB
Saturated CW Output Power
24
+26.5
dBm
IM3
-40
-25
dBc
POUT=+18.5dBm/tone
IM5
-45
-30
dBc
POUT=+18.5dBm/tone
Collector Current, ICC
175
250
mA
Total of pins 7 and 8
VPD Current
<3.5
mA
Into pin 4
CW Total Efficiency
47
%
Two Tone Total Efficiency
26
%
POUT=+18.5dBm/tone
Power Supply
Power Supply Voltage
2.7 to 7.5
V
Power Supply Idle Current
45
80
mA
Total "OFF" Current Drain
1
10
µA
VPD<0.1VDC
Turn-on Time
<100
ns
VPD=0 to VPD=+4VDC
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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