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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
RF IN
GND
GND
PD
VCC1
VCC2
PRE AMP PWR
RF OUT
RF OUT
GND
GND
GND
RF OUT
RF OUT
BIAS
CIRCUITS
FPA
PRE
AMP
RF2103P
MEDIUM POWER LINEAR AMPLIFIER
• Digital Communication Systems
• Spread-Spectrum Communication Systems
• Driver for Higher Power Linear Applications
• Portable Battery-Powered Equipment
• Commercial and Consumer Systems
• Base Station Equipment
The RF2103P is a medium power linear amplifier IC. The
device is manufactured on an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final linear RF amplifier in
UHF radio transmitters operating between 450MHz and
1000 MHz. It may also be used as a driver amplifier in
higher power applications. The device is self-contained
with the exception of the output matching network, power
supply feed line, and bypass capacitors, and it produces
an output power level of 750mW (CW). The device can
be used in 3 cell battery applications. The maximum CW
output at 3.6V is 175mW. The unit has a total gain of
31dB, depending upon the output matching network.
• 450MHz to 1000MHz Operation
• Up to 750mW CW Output Power
• 31dB Small Signal Gain
• Single 2.7V to 7.5V Supply
• 47% Efficiency
• Digitally Controlled Power Down Mode
RF2103P
Medium Power Linear Amplifier
RF2103P PCBA
Fully Assembled Evaluation Board
2
Rev B1 010720
0.156
0.148
0.059
0.057
0.252
0.236
0.010
0.004
.018
.014
8° MAX
0° MIN
0.0500
0.0164
0.010
0.007
0.347
0.339
0.050
Package Style: SOIC-14
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