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2-34
RF2114
Rev A5 001222
2
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +8.5
VDC
Power Down Voltage (VPD)
-0.5 to +5.0
V
DC Supply Current
500
mA
Input RF Power
+12
dBm
Output Load VSWR
20:1
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25°C, VCC=5.8V, VPD=4.0 V,
ZLOAD=18Ω, PIN=6dBm, Freq=150MHz
Frequency Range
1 to 600
MHz
Saturated Output Power
+28
+29
+31
dBm
Output Power
>+27
dBm
Frequency> 450MHz
Power Gain
30
36
40
dB
CW Total Efficiency
45
%
Two Tone Total Efficiency
26
%
POUT = +19dBm/tone
IM3
-50
-40
-25
dBc
POUT = +19dBm/tone
IM5
-70
-43
-30
dBc
POUT = +19dBm/tone
Second Harmonic
-24
dBc
Without external second harmonic trap
Third Harmonic
-30
dBc
Output Noise Power
< -125
dBm/Hz
Input VSWR
<3:1
With external matching network; see appli-
cation schematic
Input Impedance
50
Ω
With external matching network; see appli-
cation schematic
Load Impedance
18+ j0
Ω
Load impedance for optimal match
Power Down Control
Power Down “ON”
VCC
V
Voltage supplied to the input; Part is “ON”
Power Down “OFF”
0
0.2
V
Voltage supplied to the input; Part is “OFF”
Power Supply
Power Supply Voltage
2.7 to 6.5
V
Power Supply Idle Current
45
90
mA
Supply Current
150
300
500
mA
Total of pins 5 and 6
VPD Current
< 3.5
mA
Into pin 4
Total "OFF" Current Drain
10
µA
VPD <0.1VDC
Turn-on Time
< 100
ns
VPD=0 to VPD=+4VDC
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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