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2-33
2
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
RF1 IN
GND
GND
PD
RF2 IN
RF1 OUT
VCC1
RF2 OUT
RF2 OUT
GND
GND
GND
RF2 OUT
RF2 OUT
BIAS CIRCUIT
PA
PRE AMP
1
2
3
4
5
6
7
14
13
12
11
10
9
8
RF2114
MEDIUM POWER LINEAR AMPLIFIER
• Digital Communication Systems
• Spread-Spectrum Communication Systems
• Driver for Higher Power Linear Applications
• Portable Battery-Powered Equipment
• Commercial and Consumer Systems
• Base Station Equipment
The RF2114 is a medium to high power linear amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as the final linear
RF amplifier in UHF radio transmitters operating between
1 MHz and 600 MHz. It may also be used as a driver
amplifier in higher power applications. The device is self-
contained with the exception of the output matching net-
work, power supply feed line, and bypass capacitors. The
device can be used in 3-cell battery applications. The
maximum CW output at 3V is 125mW. The unit has a
total gain of 35dB, depending upon the output matching
network.
• 1MHz to 600MHz Operation
• Over 800mW CW Output Power
• 35dB Small Signal Gain
• Single 2.7V to 6.5V Supply
• 45% Efficiency
• Digitally Controlled Power Down Mode
RF2114
Medium Power Linear Amplifier
RF2114 PCBA
Fully Assembled Evaluation Board
2
Rev A5 001222
0.156
0.148
0.059
0.057
0.252
0.236
0.010
0.004
.018
.014
8° MAX
0° MIN
0.0500
0.0164
0.010
0.007
0.347
0.339
0.050
Package Style: SOIC-14
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