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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
RF IN
RF IN
PC
VCC
RF OUT
RF OUT
RF OUT
RF OUT
BIAS
CIRCUIT
PACKAGE BASE
GND
RF2125
HIGH POWER LINEAR AMPLIFIER
• PCS Communication Systems
• Digital Communication Systems
• DECT Cordless Applications
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
The RF2125 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in digital PCS phone transmitters and base sta-
tions requiring linear amplification operating between
1500 MHz and 2200 MHz. It will also function as a high
efficiency amplifier for constant envelope applications
such as DECT. The device is packaged in an 8-lead
ceramic package with a backside ground. The device is
self-contained with the exception of the output matching
network and power supply feed line. It produces a typical
output power level of 1 W.
• Single 2.7V to 7.5V Supply
• 1W Output Power
•14dB Gain
• 45% Efficiency
• Power Down Mode
• 1500MHz to 2200MHz Operation
RF2125
High Power Linear Amplifier
RF2125 PCBA
Fully Assembled Evaluation Board
2
Rev A7 010112
.315
.305
.180 SQ MAX
.017
.013
.050
.006
.004
4°MAX
0°MIN
.017
.013
.057 MAX
.004
.000
1
.166
SQ
Metal lid and base, gold plated
Package Style: SOP-8-C
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