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2-110
RF2132
Rev B9 010417
2
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (No RF)
-0.5 to +8.0
VDC
Supply Voltage (POUT<32dBm)
-0.5 to +5.0
VDC
Power Control Voltage (VPC)
-0.5to+5.0orVCC
V
DC Supply Current
800
mA
Input RF Power
+12
dBm
Output Load VSWR
10:1
Storage Temperature
-40 to +150
°C
Junction Temperature
200
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 °C, VCC=4.8V, VPC=4.0V,
Freq= 824MHz to 849MHz
Usable Frequency Range
800
824 to 849
950
MHz
Linear Gain
27
29
31
dB
Total Linear Efficiency
40
45
%
Efficiency at Max Output
50
55
%
OFF Isolation
23
27
dB
VPC=0V,PIN=+6dBm
Second Harmonic
-30
dBc
Including Second Harmonic Trap
Maximum Linear Output Power
28.5
29
IS-95A CDMA Modulation
Adjacent Channel Power Rejec-
tion @ 885 kHz
-46
-44
dBc
Pout = 28 dBm
ACPR can be improved by trading off effi-
ciency.
Adjacent Channel Power Rejec-
tion @ 1.98 MHz
-58
-56
dBc
Pout = 28 dBm
Maximum CW Output Power
31.5
32
dBm
Operating Case Temperature
-30
110
°C
Pout = 31 dBm, Efficiency = 55%
Ambient Operating Temperature
-30
100
°C
Junction to Case Thermal Resis-
tance
85
°C/W
Input VSWR
<2:1
Output Load VSWR
10:1
No oscillations
Power Down
Turn On/Off Time
100
ns
Total Current
10
µA
“OFF” State
VPC “OFF” Voltage
0.2
0.5
V
VPC “ON” Voltage
3.6
4.0
Vcc
V
Power Supply
Power Supply Voltage
4.2
4.8
5.0
V
Operating voltage
Idle Current
40
100
mA
VPC=4.0V
Current into VPC pin
15
20
mA
“ON” State
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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