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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
BIAS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
NC
RF IN
GND
GND
GND
GND
PC
GND
RF OUT
RF OUT
GND
GND
RF OUT
RF OUT
GND
RF2132
LINEAR POWER AMPLIFIER
• 4.8V AMPS Cellular Handsets
• 4.8V CDMA/AMPS Handsets
• 4.8V JCDMA/TACS Handsets
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment
The RF2132 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in dual-mode 4-cell CDMA/AMPS handheld digi-
tal cellular equipment, spread-spectrum systems, and
other applications in the 800MHz to 950MHz band. The
device is self-contained with 50
Ω input and the output
can be easily matched to obtain optimum power, effi-
ciency, and linearity characteristics over varying supply
and control voltages.
• Single 4.2V to 5.0V Supply
• Upto29dBm Linear Output Power
• 29dB Gain With Analog Gain Control
• 45% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 950MHz Operation
RF2132
Linear Power Amplifier
RF2132 PCBA
Fully Assembled Evaluation Board
2
Rev B9 010417
0.035
0.016
0.010
0.008
8° MAX
0° MIN
0.021
0.014
0.392
0.386
0.158
0.150
0.244
0.230
0.069
0.064
0.050
0.060
0.054
-A-
0.009
0.004
Package Style: Standard Batwing
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