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2
Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
16
1
13
14
15
GND
GND
RF IN
2
3
4
9
8
7
6
5
RF OUT
RF OUT
RF OUT
12
11
10
RF2192
3V 900MHZ LINEAR POWER AMPLIFIER
• 3V CDMA/AMPS Cellular Handsets
• 3V JCDMA Cellular Handsets
• 3V CDMA2000 Cellular Handsets
• 3V TDMA/GAIT Cellular Handsets
• Spread-Spectrum Systems
• Portable Battery-Powered Equipment
The RF2192 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3 V CDMA/AMPS and CDMA2000 handheld digital cellu-
lar equipment, spread-spectrum systems, and other
applications in the 800MHz to 960MHz band. The
RF2192 has a low power mode to extend battery life
under low output power conditions. The device is pack-
aged in a 16 pin, 4mmx4mm leadless chip carrier.
• Single 3V Supply
• 29dBm Linear Output Power
• 37% Linear Efficiency
• Low Power Mode
• 45mAidlecurrent
• 47% Peak Efficiency 31dBm Output
RF2192
3V 900MHz Linear Power Amplifier
RF2192 PCBA
Fully Assembled Evaluation Board
2
Rev A1 010830
3.75
3.75
+
1.50 SQ
4.00
4.00
1
0.45
0.28
3.20
1.60
0.75
0.50
12°
INDEX AREA
3
1.00
0.90
0.75
0.65
0.05
0.00
NOTES:
5
Package Warpage: 0.05 max.
4
Pins 1 and 9 are fused.
Shaded Pin is Lead 1.
1
Dimension applies to plated terminal and is measured
0.10 mm and 0.25 mm from terminal tip.
2
The terminal #1 identifier and terminal numbering conv
shall conform to JESD 95-1 SPP-012. Details of termin
identifier are optional, but must be located within the z
indicated. The identifier may be either a mold or marke
feature.
3
0.80
TYP
2
1
Dimensions in mm.
Package Style: LCC, 16-Pin, 4x4
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