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RF2304PCBA 数据表(PDF) 3 Page - RF Micro Devices

部件名 RF2304PCBA
功能描述  GENERAL PURPOSE LOW-NOISE AMPLIFIER
PDF  10 Pages
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制造商  RFMD [RF Micro Devices]
网页  http://www.rfmd.com
标志 RFMD - RF Micro Devices

RF2304PCBA 数据表(HTML) 3 Page - RF Micro Devices

  RF2304PCBA Datasheet HTML 1Page - RF Micro Devices RF2304PCBA Datasheet HTML 2Page - RF Micro Devices RF2304PCBA Datasheet HTML 3Page - RF Micro Devices RF2304PCBA Datasheet HTML 4Page - RF Micro Devices RF2304PCBA Datasheet HTML 5Page - RF Micro Devices RF2304PCBA Datasheet HTML 6Page - RF Micro Devices RF2304PCBA Datasheet HTML 7Page - RF Micro Devices RF2304PCBA Datasheet HTML 8Page - RF Micro Devices RF2304PCBA Datasheet HTML 9Page - RF Micro Devices Next Button
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4-59
RF2304
Rev A5 010717
4
Application Schematic
Pin
Function
Description
Interface Schematic
1GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
2GND
Same as pin 1.
3RF IN
DC coupled RF input. A broadband impedance match is produced by
internal shunt resistive feedback. The DC level is approximately
200mV. If a DC path exists in the connected circuitry, an external DC-
blocking capacitor is required to properly maintain the DC operating
point.
4GND
Same as pin 1.
5GND
Same as pin 1.
6RF OUT
RF output. A broadband impedance match is produced by internal
shunt resistive feedback. The DC connection to the power supply is
provided through an external chip inductor having greater than 150
reactance at the operating frequency. An external DC-blocking capaci-
tor is required if the following circuitry is not DC-blocked.
7VDD2
Bias control connection. This pin is normally connected to the power
supply, but can be used to switch the amplifier on and off by switching
between power supply voltage and ground. This pin sinks approxi-
mately 600
µA when connected to V
DD, and sources less than 10 µA
when grounded.
8NC
No connection.
RF IN
RF OUT
V
DD
2
1
4
3
7
8
5
6
100 pF
RF IN
L1
RF Choke
100 pF
1nF
V
DD



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