4-57
4
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
ü
SiGe HBT
Si CMOS
GND
GND
GND
RF IN
GND
RF OUT
VDD
NC
2
1
4
3
7
8
5
6
RF2304
GENERAL PURPOSE LOW-NOISE AMPLIFIER
• Receive or Transmit Low-Noise Amplifiers
• FDD and TDD Communication Systems
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
•Wireless LAN
• ISM Band Applications
The RF2304 is a low-noise small-signal amplifier. The
device is manufactured on a low-cost Gallium Arsenide
MESFET process, and has been designed for use as a
gain block in high-end communication systems operating
from less than 300MHz to above 2.5 GHz. With +6dBm
output power, it may also be used as a driver in transmit-
ter applications, or in highly linear receivers. The device is
packaged in an 8-lead plastic package and is self-con-
tained, requiring just an inductor and blocking capacitors
to operate. The +6dBm output power, combined with the
1.8dB noise figure at 900MHz allows excellent dynamic
range for a variety of receive and transmit applications.
• Single 2.7V to 6.0V Supply
• 6dBm Output Power
• 8dB Small Signal Gain at 900MHz
• 1.8dB Noise Figure at 900MHz
• Low DC Current Consumption of 5mA
• 300MHz to 2500MHz Operation
RF2304
General Purpose Low-Noise Amplifier
RF2304 PCBA
Fully Assembled Evaluation Board
4
Rev A5 010717
0.244
0.229
0.157
0.150
0.018
0.014
0.050
0.068
0.053
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity -
0.005 with respect to datum "A".
Dimensions in mm
0.196
0.189
0.008
0.004
-A-
8° MAX
0° MIN
0.034
0.016
0.009
0.007
Package Style: SOIC-8
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