3-2
RF2312
Rev C2 010813
3
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current
125
mA
Input RF Power
+18
dBm
Output Load VSWR
20:1
Ambient Operating Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Maximum Junction Temperature
150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall (50
Ω)
T = 25°C, VCC=9V, Freq = 900 MHz,
RC=30Ω,50Ω System, PIN=-4dBm
Frequency Range
DC to 2500
MHz
3dB Bandwidth
Gain
14.5
15.1
dB
Noise Figure
3.8
4.3
dB
From 50MHz to 300MHz, -30 to +70 ° C
4.2
4.8
dB
From 300MHz to 1000MHz, -30 to +70 °C
Input VSWR
1.7:1
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output VSWR
1.4:1
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output IP3
+40
+42
dBm
At 100MHz
Output IP3
+33
+36
dBm
At 500MHz
Output IP3
+30
+33
dBm
At 900MHz
Output P1dB
+21
+22
dBm
At 100MHz
Output P1dB
+20
+21
dBm
At 500MHz
Output P1dB
+17
+18.5
dBm
At 900MHz
Saturated Output Power
+23
dBm
At 100MHz
Saturated Output Power
+22.5
dBm
At 500MHz
Saturated Output Power
+20.5
dBm
At 900MHz
Reverse Isolation
20
dB
Thermal
ThetaJC
66
°C/W
PDISS =0.61W, TAMB=85°C, TCASE=96.6°C,
TJ=136.8°C
No RF Input/Output
Mean Time Between Failures
708x106
hours
TAMB=+25°C
2.75x106
hours
TAMB=+80°C
Power Supply
Device Voltage (VD)6.0
V
On pin 8, ICC=100mA
5.0
V
On pin 8, ICC=40mA
Operating Current Range
85
100
115
mA
VCC=9.0V, RC=30Ω
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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