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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
4
GND
3
GND
2
GND
1
RF IN
8RF OUT
7GND
6GND
5GND
RF2312
LINEAR GENERAL PURPOSE AMPLIFIER
• CATV Distribution Amplifiers
• Cable Modems
• Broadband Gain Blocks
• Laser Diode Driver
• Return Channel Amplifier
• Base Stations
The RF2312 is a general purpose, low cost high linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 75
Ω gain block. The gain flatness of
better than 0.5dB from 5MHz to 1000MHz, and the high
linearity, make this part ideal for cable TV applications.
Other applications include IF and RF amplification in
wireless voice and data communication products operat-
ing in frequency bands up to 2500MHz. The device is
self-contained with 75
Ω input and output impedances,
and requires only two external DC biasing elements to
operate as specified.
• DC to well over 2500MHz Operation
• Internally Matched Input and Output
• 15dB Small Signal Gain
• 3.8dB Noise Figure
• +20dBm Output Power
• Single 5V to 12V Positive Power Supply
RF2312
Linear General Purpose Amplifier
RF2312 PCBA
Fully Assembled Evaluation Board - 75
Ω
RF2312 PCBA
Fully Assembled Evaluation Board - 50
Ω
3
Rev C2 010813
0.248
0.232
0.200
0.192
0.160
0.152
0.018
0.014
0.050
0.059
0.057
0.010
0.004
-A-
0.0100
0.0076
0.0500
0.0164
8° MAX
0° MIN
NOTES:
1. Shaded lead is pin 1.
2. All dimensions are excluding flash, protrusions or burrs.
3. Lead coplanarity: 0.005 with respect to datum "A".
4. Package surface finish: Matte (Charmilles #24~27).
Package Style: SOIC-8
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