2 / 10 page
Preliminary
4-200
RF2363
Rev B2 010129
4
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +6.0
VDC
Input RF Level
+10
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
RF Frequency Range
800 to 1000
MHz
1800 to 2000
MHz
950MHz Performance
T = 25°C, RF = 950MHz, VCC=2.8V,
EN1= 2.8V, EN2= 0V
Gain
16
18
20
dB
Isolation
16
dB
EN1= 0V
Gain Step
34
dB
Gain - Isolation
Noise Figure
1.3
dB
Output IP3
+17
+24
dBm
Input P1dB
-10
dBm
Reverse Isolation
20
dB
Input VSWR
1.8:1
2:1
No external matching
Output VSWR
1.8:1
2:1
With external match as per GSM/DCS Appli-
cation Schematic
1850 MHz Performance
T = 25°C, RF = 1850MHz, VCC=2.8V,
EN2=2.8V, EN1=0V
Gain
20
21.5
24
dB
Isolation
10
dB
EN2= 0V
Gain Step
31.5
dB
Gain - Isolation
Noise Figure
1.4
dB
Output IP3
+16
+22
dBm
Input P1dB
-12
dBm
Reverse Isolation
30
dB
Input VSWR
1.7:1
2:1
No external matching
Output VSWR
1.7:1
2:1
With external match as per GSM/DCS Appli-
cation Schematic
LNA Select
“Enable” Voltage
VCC
V
“Disable” Voltage
0
V
Power Supply
T= 25 °C
Voltage
2.8
V
Specifications
2.5 to 5.0
V
Operating limits
Current Consumption
5
mA
900MHz LNA Enabled, 1900MHz LNA Dis-
abled; total DC current
7.5
mA
1900MHz LNA Enabled, 900MHz LNA Dis-
abled; total DC current
1
µA
EN1= EN2= 0V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
