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RF2371 数据表(PDF) 4 Page - RF Micro Devices

部件名 RF2371
功能描述  3V LOW NOISE AMPLIFIER
PDF  8 Pages
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制造商  RFMD [RF Micro Devices]
网页  http://www.rfmd.com
标志 RFMD - RF Micro Devices

RF2371 数据表(HTML) 4 Page - RF Micro Devices

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Preliminary
4-224
RF2371
Rev A2 010205
4
Application Information
The RF2371 may be configured to use either the internal current setting or the external current setting. This choice is
made by asserting IPSET, pin 4, to CMOS level “low” for the internal current setting or CMOS level “high” for the external
current setting.
Internal Current Setting
When IPSET is set to CMOS “low”, the internal current settings are chosen. This current draw is typically 2.9mA. In this
mode, the resistorR1 may be removed from the evaluation board schematic and ISET left floating. The condition for opti-
mal IP3 is to use the internal current setting option and leave the ISET pin open (no connect).
External Current Setting
The external current setting is configured by using the series resistor between ISET, pin7, and ground (refer to resistor
R1 in evaluation board schematic). The value of the resistor may be changed to permit various operating currents up to a
maximum allowable current of 20mA. The table below gives approximate minimum R1 values to allow the 20mA maxi-
mum current draw at various operating voltages.
Note: When the internal current setting was selected, the part tested drew 4.4mA, which is higher than typical
(2.9 mA). Thus values of R1 given vary from part to part.
VCC (V)
Resistor R1 (
Ω)
Current Draw (mA)
2.7
2.4k
20.1
3.0
2.7k
20.1
3.3
3.0k
20.0
3.6
3.3k
19.8



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