4-221
4
Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
ü
SiGe HBT
Si CMOS
8
7
6
5
RFOUT
ISET
VCC
ENABLE
RF IN
GND1
GND2
IPSET
1
2
3
4
Bias Circuits
RF2371
3V LOW NOISE AMPLIFIER
•GSM Handsets
• CDMA Handsets
• TDMA Handsets
• IForRFBufferAmplifiers
• Driver Stage for Power Amplifiers
• Oscillator Loop Amplifiers
The RF2371 is a general purpose, low-cost, high perfor-
mance low noise amplifier designed for operation from a
2.7V to 4V supply with low current consumption. The
attenuation of the device is controlled when in power
down mode, providing a known gain step. The RF2371 is
available in a small industry-standard SOT23-8 surface
mount package, enabling compact designs which con-
serve board space. The design features a highly accurate
PTAT (Proportional To Absolute Temperature) biasing
scheme using bandgap cells.
• 700MHz to 2000MHz Operation
• 2.7V to 3.6V Single Supply
•+5dBm Input IP3 at 3.0mA
•12dB Gain at 1950MHz
• 1.8dB Noise Figure at 1950MHz
•17dB Gain Step
RF2371
3V Low Noise Amplifier
RF2371 PCBA
Fully Assembled Evaluation Board
4
Rev A2 010205
0.127
3°MAX
0°MIN
0.55
0.35
0.365
1.59
1.61
3.00
2.60
3.00
2.80
0.650
0.15
0.05
1.44
1.04
*When Pin 1 is in
upper left, text
reads downward
(as shown).
Package Style: SOT23-8
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