R8C32C datasheet(44/55 Pages) RENESAS

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R8C/32C Group

5. Electrical Characteristics

R01DS0009EJ0100 Rev 1.00

Page 44 of 52

Aug. 24, 2010

Note:

2.7 V

≤ VCC < 4.2 V and Topr = −20 to 85°C (N version) / −40 to 85°C (D version), f(XIN) = 10 MHz, unless otherwise specified.

Table 5.22

Electrical Characteristics (3) [2.7 V

≤ Vcc < 4.2 V]

Symbol

Parameter

Condition

Standard

Unit

Min.

Typ.

Max.

VOH

Output “H” voltage

Other than XOUT

Drive capacity High IOH =

−5 mA

VCC

− 0.5

−

VCC

Drive capacity Low

IOH =

−1 mA

VCC

− 0.5

−

VCC

XOUT

IOH =

−200 µA1.0

−

VCC

VOL

Output “L” voltage

Other than XOUT

Drive capacity High IOL = 5 mA

−−

0.5

Drive capacity Low

IOL = 1 mA

−−

0.5

XOUT

IOL = 200

µA

−−

0.5

VT+-VT-

Hysteresis

INT0, INT1, INT3,

KI0, KI1, KI2, KI3,

TRAIO, TRBO,

TRCIOA, TRCIOB,

TRCIOC, TRCIOD,

TRCTRG, TRCCLK,

ADTRG,

RXD0, RXD2,

CLK0, CLK2,

SSI, SCL, SDA, SSO

VCC = 3.0 V

0.1

0.4

−

RESET

VCC = 3.0 V

0.1

0.5

−

IIH

Input “H” current

VI = 3 V, VCC = 3.0 V

−−

4.0

µA

IIL

Input “L” current

VI = 0 V, VCC = 3.0 V

−−

−4.0

µA

RPULLUP

Pull-up resistance

VI = 0 V, VCC = 3.0 V

168

Ω

RfXIN

Feedback

resistance

XIN

−

0.3

−

Ω

RfXCIN

Feedback

resistance

XCIN

−

Ω

VRAM

RAM hold voltage

During stop mode

1.8

−−

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