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74LVCV2G66GD 数据表(PDF) 6 Page - NXP Semiconductors |
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74LVCV2G66GD 数据表(HTML) 6 Page - NXP Semiconductors |
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6 / 23 page  74LVCV2G66 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 16 June 2010 6 of 23 NXP Semiconductors 74LVCV2G66 Overvoltage tolerant bilateral switch 10.1 Test circuits 10.2 ON resistance [1] All typical values are measured at Tamb = 25 °C and nominal VCC. [2] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and temperature. VI = GND and VO =GND or 5.5V. VI = 5.5 V or GND and VO = open circuit. Fig 6. Test circuit for measuring OFF-state leakage current Fig 7. Test circuit for measuring ON-state leakage current 001aag488 IS VI VIL VO VCC GND nY nZ nE 001aag489 IS VI VIH VO VCC GND nY nZ nE Table 8. Resistance RON At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graphs see Figure 9 and Figure 10. Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max RON(peak) ON resistance (peak) VSW =GND to VCC; VI =VIH; see Figure 8 ISW =8mA; VCC = 2.3 V to 2.7 V - 13 30 - 30 Ω ISW =12mA; VCC =2.7 V - 10 25 - 25 Ω ISW =24mA; VCC = 3.0 V to 3.6 V - 8.3 20 - 20 Ω ISW =32mA; VCC = 4.5 V to 5.5 V - 7.4 15 - 15 Ω RON(rail) ON resistance (rail) VSW = GND; VI =VIH; see Figure 8 ISW =8mA; VCC = 2.3 V to 2.7 V - 8.5 20 - 20 Ω ISW =12mA; VCC =2.7 V - 8.0 18 - 18 Ω ISW =24mA; VCC = 3.0 V to 3.6 V - 7.5 15 - 15 Ω ISW =32mA; VCC = 4.5 V to 5.5 V - 7.3 10 - 10 Ω VSW =VCC; VI =VIH ISW =8mA; VCC = 2.3 V to 2.7 V - 8.5 20 - 20 Ω ISW =12mA; VCC =2.7 V - 7.2 18 - 18 Ω ISW =24mA; VCC = 3.0 V to 3.6 V - 6.5 15 - 15 Ω ISW =32mA; VCC = 4.5 V to 5.5 V - 5.7 10 - 10 Ω RON(flat) ON resistance (flatness) VSW =GND to VCC; VI =VIH [2] ISW =8mA; VCC =2.5 V - 17 - - - Ω ISW =12mA; VCC =2.7 V - 10 - - - Ω ISW =24mA; VCC =3.3 V - 5 - - - Ω ISW =32mA; VCC =5.0 V - 3 - - - Ω |
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