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ADR3450ARJZ-R7 数据表(PDF) 14 Page - Analog Devices

部件名 ADR3450ARJZ-R7
功能描述  Micropower, High Accuracy Voltage References
PDF  20 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADR3450ARJZ-R7 数据表(HTML) 14 Page - Analog Devices

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ADR3425/ADR3450
Rev. 0 | Page 14 of 20
THEORY OF OPERATION
BANDGAP
VOLTAGE
REFERENCE
ENABLE
GND FORCE
REF FORCE
REF SENSE
RFB2
RFB1
VDD
VBG
GND SENSE
Figure 39. Block Diagram
The ADR342
5/ADR3450 use a patented voltage reference
architecture to achieve high accuracy, low temperature
coefficient (TC), and low noise in a CMOS process. Like all
bandgap references, the ADR3425/ADR3450 combine two
voltages of opposite TCs to create an output voltage that is
nearly independent of ambient temperature. However, unlike
traditional bandgap voltage references, the temperature-
independent voltage of the ADR3425/ADR3450 are arranged to
be the base-emitter voltage, VBE, of a bipolar transistor at room
temperature rather than the VBE extrapolated to 0 K (the VBE of
bipolar transistor at 0 K is approximately VG0, the band gap
voltage of silicon). A corresponding positive-TC voltage is then
added to the VBE voltage to compensate for its negative TC.
The key benefit of this technique is that the trimming of the
initial accuracy and TC can be performed without interfering
with one another, thereby increasing overall accuracy across
temperature. Curvature correction techniques further reduce
the temperature variation.
The bandgap voltage is then buffered and amplified to produce
stable output voltages of 2.5 V and 5.0 V. The output buffer can
source up to 10 mA and sink up to 3 mA of load current.
The ADR3425/ADR3450 leverage Analog Devices patented
DigiTrim technology to achieve high initial accuracy and low
TC, while precision layout techniques lead to very low long-term
drift and thermal hysteresis.
LONG-TERM STABILITY
One of the key parameters of the ADR3425/ADR3450
references is long-term stability. Regardless of output voltage,
internal testing during development showed a typical drift of
approximately 30 ppm after 1,000 hours of continuous, non
loaded operation in a +50°C environment.
It is important to understand that long-term stability is not
guaranteed by design and that the output from the device may
shift beyond the typical 30 ppm specification at any time,
especially during the first 200 hours of operation. For systems
that require highly stable output voltages over long periods of
time, the designer should consider burning-in the devices prior
to use to minimize the amount of output drift exhibited by the
reference over time. See the AN-713 Application Note for more
information regarding the effects of long-term drift and how it
can be minimized.
POWER DISSIPATION
The ADR3425/ADR3450 voltage references are capable of
sourcing up to 10 mA of load current at room temperature
across the rated input voltage range. However, when used in
applications subject to high ambient temperatures, the input
voltage and load current should be carefully monitored to
ensure that the device does not exceeded its maximum power
dissipation rating. The maximum power dissipation of the
device can be calculated via the following equation:
]
[W
T
T
P
JA
A
J
D
θ
=
where:
PD is the device power dissipation.
TJ is the device junction temperature.
TA is the ambient temperature.
θJA is the package (junction-to-air) thermal resistance.
Because of this relationship, acceptable load current in high
temperature conditions may be less than the maximum current-
sourcing capability of the device. In no case should the part be
operated outside of its maximum power rating because doing so
can result in premature failure or permanent damage to the
device.



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