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TDF8590TH 数据表(PDF) 13 Page - NXP Semiconductors

部件名 TDF8590TH
功能描述  2 X 80 W SE (4 OHM) or 1 X 160 W BTL (8 OHM) class-D amplifier
PDF  30 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

TDF8590TH 数据表(HTML) 13 Page - NXP Semiconductors

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TDF8590TH_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 23 April 2007
13 of 30
NXP Semiconductors
TDF8590TH
2
× 80 W SE (4 Ω) or 1 × 160 W BTL (8 Ω) class-D amplifier
10. Dynamic characteristics
10.1 Dynamic characteristics (SE)
[1]
Rs(L) is the series resistance of inductor of low-pass LC filter in the application.
[2]
Output power is measured indirectly; based on RDSon measurement (see Section 12.3).
[3]
THD is measured in a bandwidth of 22 Hz to 20 kHz, AES brick wall. Maximum limit is guaranteed but may not be 100 % tested.
[4]
Vripple = Vripple(max) = 2 V (peak-to-peak value); source resistance RS = 0 Ω.
[5]
Frequency bandwidth B = 22 Hz to 20 kHz, AES brick wall (see Section 12.4).
[6]
B = 22 Hz to 20 kHz, AES brick wall, independent of RS (see Section 12.4).
[7]
Vi(CM) is the input common mode voltage.
Table 8.
Dynamic characteristics (SE)
VP = ±27 V; RL = 4 Ω; fi = 1 kHz; fosc = 310 kHz; Rs(L) < 0.1 Ω [1]; Tamb = −40 °C to +85 °C; Tj = −40 °C to +150 °C; unless
otherwise specified. See Section 12.7 for the SE application schematics. The 2nd-order demodulation filter coil is referred to
as L and the capacitor as C.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Po
output power
L = 10
µH; C=1 µF; T
j =85 °C; RL =2 Ω;
VP = ±18 V; THD = 0.5 %
[2] -48
-
W
L=10
µH; C=1 µF; Tj =85 °C; RL =2 Ω;
VP = ±18 V; THD = 10 %
[2] -60
-
W
L = 22
µH; C = 680 nF; Tj = 85 °C;
RL =4 Ω; VP = ±27 V; THD = 0.5 %
[2] -65
-
W
L = 22
µH; C = 680 nF; Tj = 85 °C;
RL =4 Ω; VP = ±27 V; THD = 10 %
[2] -80
-
W
IOM
peak output current
current limiting, see Section 6.4.3
8
--A
THD
total harmonic distortion
Po = 1 W; fi = 1 kHz
[3] -
0.02
0.2
%
Po = 1 W; fi = 10 kHz
[3] -
0.10
-
%
Gv(cl)
closed-loop voltage gain
25
26
27
dB
SVRR
supply voltage rejection
ratio
operating; fripple = 100 Hz
[4] -55
-
dB
operating; fripple = 1 kHz
[4] 40
50
-
dB
mute; fripple = 1 kHz
[4] -55
-
dB
standby; fripple = 100 Hz
[4] -80
-
dB
|Zi(dif)|
differential input
impedance
between the input pins INP and INM
45
68
-
k
Vn(o)
noise output voltage
operating; VP = ±27 V; RS = 0 Ω
[5] -
170
-
µV
operating; VP = ±18 V; RS = 0 Ω
[5] -
145
-
µV
mute; VP = ±27 V
[6] -
125
-
µV
mute; VP = ±18 V
[6] -85
-
µV
αcs
channel separation
Po = 1 W; RS = 0 Ω; fi = 1 kHz
-
70
-
dB
|∆Gv|
voltage gain difference
-
-
1
dB
αmute
mute attenuation
fi = 1 kHz; Vin = 1 V (RMS value)
-
73
-
dB
CMRR
common mode rejection
ratio
fi(CM) = 1 kHz; Vi(CM) = 1 V (RMS value)
[7] -75
-
dB



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