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TDF8590TH 数据表(PDF) 13 Page - NXP Semiconductors |
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TDF8590TH 数据表(HTML) 13 Page - NXP Semiconductors |
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13 / 30 page ![]() TDF8590TH_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 23 April 2007 13 of 30 NXP Semiconductors TDF8590TH 2 × 80 W SE (4 Ω) or 1 × 160 W BTL (8 Ω) class-D amplifier 10. Dynamic characteristics 10.1 Dynamic characteristics (SE) [1] Rs(L) is the series resistance of inductor of low-pass LC filter in the application. [2] Output power is measured indirectly; based on RDSon measurement (see Section 12.3). [3] THD is measured in a bandwidth of 22 Hz to 20 kHz, AES brick wall. Maximum limit is guaranteed but may not be 100 % tested. [4] Vripple = Vripple(max) = 2 V (peak-to-peak value); source resistance RS = 0 Ω. [5] Frequency bandwidth B = 22 Hz to 20 kHz, AES brick wall (see Section 12.4). [6] B = 22 Hz to 20 kHz, AES brick wall, independent of RS (see Section 12.4). [7] Vi(CM) is the input common mode voltage. Table 8. Dynamic characteristics (SE) VP = ±27 V; RL = 4 Ω; fi = 1 kHz; fosc = 310 kHz; Rs(L) < 0.1 Ω [1]; Tamb = −40 °C to +85 °C; Tj = −40 °C to +150 °C; unless otherwise specified. See Section 12.7 for the SE application schematics. The 2nd-order demodulation filter coil is referred to as L and the capacitor as C. Symbol Parameter Conditions Min Typ Max Unit Po output power L = 10 µH; C=1 µF; T j =85 °C; RL =2 Ω; VP = ±18 V; THD = 0.5 % [2] -48 - W L=10 µH; C=1 µF; Tj =85 °C; RL =2 Ω; VP = ±18 V; THD = 10 % [2] -60 - W L = 22 µH; C = 680 nF; Tj = 85 °C; RL =4 Ω; VP = ±27 V; THD = 0.5 % [2] -65 - W L = 22 µH; C = 680 nF; Tj = 85 °C; RL =4 Ω; VP = ±27 V; THD = 10 % [2] -80 - W IOM peak output current current limiting, see Section 6.4.3 8 --A THD total harmonic distortion Po = 1 W; fi = 1 kHz [3] - 0.02 0.2 % Po = 1 W; fi = 10 kHz [3] - 0.10 - % Gv(cl) closed-loop voltage gain 25 26 27 dB SVRR supply voltage rejection ratio operating; fripple = 100 Hz [4] -55 - dB operating; fripple = 1 kHz [4] 40 50 - dB mute; fripple = 1 kHz [4] -55 - dB standby; fripple = 100 Hz [4] -80 - dB |Zi(dif)| differential input impedance between the input pins INP and INM 45 68 - k Ω Vn(o) noise output voltage operating; VP = ±27 V; RS = 0 Ω [5] - 170 - µV operating; VP = ±18 V; RS = 0 Ω [5] - 145 - µV mute; VP = ±27 V [6] - 125 - µV mute; VP = ±18 V [6] -85 - µV αcs channel separation Po = 1 W; RS = 0 Ω; fi = 1 kHz - 70 - dB |∆Gv| voltage gain difference - - 1 dB αmute mute attenuation fi = 1 kHz; Vin = 1 V (RMS value) - 73 - dB CMRR common mode rejection ratio fi(CM) = 1 kHz; Vi(CM) = 1 V (RMS value) [7] -75 - dB |
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