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STK22N6F3 数据表(PDF) 7 Page - STMicroelectronics |
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STK22N6F3 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 15 page ![]() Obsolete Product(s) - Obsolete Product(s) STK22N6F3 Electrical characteristics Doc ID 14850 Rev 2 7/15 Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics VGS 6 4 2 0 0 5 Qg(nC) (V) 20 8 10 15 10 VDD=48V ID=22A 25 12 AM03892v1 C 3010 2010 1010 10 0 20 VDS(V) (pF) 10 4010 30 Ciss Coss Crss 5010 6010 40 50 AM03893v1 VGS(th) 0.7 0.6 0.5 0.4 -50 0 TJ(°C) (norm) 0.8 50 100 150 0.9 1.0 1.1 AM03894v1 RDS(on) 2.0 1.5 1.0 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 125 0 AM03895v1 VSD 5 9 ISD(A) (V) 7 15 11 13 0.50 0.60 0.70 0.80 TJ=25°C TJ=-50°C TJ=175°C 21 17 19 0.90 AM03896v1 |
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