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STK22N6F3 数据表(PDF) 4 Page - STMicroelectronics

部件名 STK22N6F3
功能描述  N-channel 60 V, 0.0055 OHM, 22 A, PolarPAK STripFET Power MOSFET
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STK22N6F3 数据表(HTML) 4 Page - STMicroelectronics

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Obsolete
Product(s)
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Product(s)
Electrical characteristics
STK22N6F3
4/15
Doc ID 14850 Rev 2
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
60
-
-
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc=125 °C
--
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20V
-
-
±
200
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
2
-
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 11 A
-
0.0055
0.006
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ. Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz, VGS=0
-
2500
536
44
-
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=48 V, ID = 22 A
VGS =10 V
Figure 14
-
41
12
10
-
nC
nC
nC
RG
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
-0.9
-
Ω
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD= 30 V, ID= 11 A,
RG=4.7 Ω, VGS= 10 V
Figure 13
-
16
14
-
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=30 V, ID= 11 A,
RG=4.7 Ω, VGS= 10 V
Figure 13
-
28
5
-
ns
ns



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