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M48T59 数据表(PDF) 24 Page - STMicroelectronics

部件名 M48T59
功能描述  5.0 or 3.3 V, 64 Kbit (8 Kbit x 8) TIMEKEEPER짰 SRAM
PDF  32 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M48T59 数据表(HTML) 24 Page - STMicroelectronics

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Obsolete
Product(s)
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Product(s)
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Product(s)
- Obsolete
Product(s)
DC and AC parameters
M48T59, M48T59Y, M48T59V
24/32
Table 12.
Power down/up AC characteristics
Table 13.
Power down/up trip points DC characteristics
Symbol
Parameter(1)
1.
Valid for ambient operating temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5 V, 4.75 to 5.5 V, or 3.0 to 3.6 V
(except where noted).
Min
Max
Unit
tPD
E or W at VIH before power down
0
µs
tF
(2)
2.
VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring
until 200µs after VCC passes VPFD (min).
VPFD (max) to VPFD (min) VCC fall time
300
µs
tFB
(3)
3.
VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
VPFD (min) to VSS VCC fall time
10
µs
tR
VPFD (min) to VPFD (max) VCC rise time
10
µs
tRB
VSS to VPFD (min) VCC rise time
1
µs
trec
VPFD (max) to RST high
40
200
ms
Symbol
Parameter(1)(2)
1.
Valid for ambient operating temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5 V, 4.75 to 5.5 V, or 3.0 to 3.6 V
(except where noted).
2.
All voltages referenced to VSS.
Min
Typ
Max
Unit
VPFD
Power-fail deselect voltage
M48T59
4.5
4.6
4.75
V
M48T59Y
4.2
4.35
4.5
V
M48T59V
2.7
2.9
3.0
V
VSO
Battery back-up switchover
voltage
M48T59/Y
3.0
V
M48T59V
VPFD –100mV
V
tDR
(3)
3.
At 25°C, VCC = 0 V.
Expected data retention time
7
YEARS



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