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STB85NF55 数据表(PDF) 7 Page - STMicroelectronics |
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STB85NF55 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 15 page ![]() STB/I/P85NF55 Electrical characteristics Doc ID 8405 Rev 9 7/15 Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature VGS 4 0 0 30 Qg(nC) (V) 120 8 60 90 12 16 GC93660 C 6000 4000 2000 0 20 VDS(V) (pF) 10 8000 30 40 GC93670 VGS(th) 1.0 0.8 0.6 0.4 -50 0 TJ(°C) (norm) 1.2 50 100 GC93680 RDS(on) 1.4 1.0 0.6 0.2 -50 0 TJ(°C) (norm) 50 100 1.8 GC93690 VSD 0 40 ISD(A) (V) 20 60 80 0.3 0.6 0.9 1.2 GC93700 BVDSS -50 0 TJ(°C) (norm) 50 100 0.90 0.95 1.00 1.05 1.10 GC93710 |
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