STB85NF55_09 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STB/I/P85NF55

4/15

Doc ID 8405 Rev 9

Electrical characteristics

(TCASE= 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 40 A

0.0062

0.008

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS = 15 V, ID = 40 A

120

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f = 1 MHz,

VGS = 0

3700

900

310

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 60 V, ID = 80 A

VGS =10 V

120

150

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD= 30 V, ID= 40 A,

RG=4.7 Ω, VGS=10 V

Figure 14 on page 8

100

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