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M41ST87YMX6F 数据表(PDF) 18 Page - STMicroelectronics

部件名 M41ST87YMX6F
功能描述  5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
PDF  52 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M41ST87YMX6F 数据表(HTML) 18 Page - STMicroelectronics

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Operating modes
M41ST87Y, M41ST87W
18/52
Doc ID 9497 Rev 8
power input is switched from the VCC pin to the battery, and the clock registers and external
SRAM are maintained from the attached battery supply.
All signal outputs become high impedance. The VOUT pin is capable of supplying 100µA of
current to the attached memory with less than 0.3 volts drop under this condition. On power
up, when VCC returns to a nominal value, write protection continues for trec by inhibiting
ECON. The RST signal also remains active during this time (see Figure 28 on page 46).
Note:
Most low power SRAMs on the market today can be used with the M41ST87Y/W RTC
SUPERVISOR. There are, however some criteria which should be used in making the final
choice of an SRAM to use. The SRAM must be designed in a way where the chip enable
input disables all other inputs to the SRAM. This allows inputs to the M41ST87Y/W and
SRAMs to be “Don’t Care” once VCC falls below VPFD(min). The SRAM should also
guarantee data retention down to VCC = 2.0 volts. The chip enable access time must be
sufficient to meet the system needs with the chip enable output propagation delays
included. If the SRAM includes a second chip enable pin (E2), this pin should be tied to
VOUT.
If data retention lifetime is a critical parameter for the system, it is important to review the
data retention current specifications for the particular SRAMs being evaluated. Most SRAMs
specify a data retention current at 3.0 volts. Manufacturers generally specify a typical
condition for room temperature along with a worst case condition (generally at elevated
temperatures). The system level requirements will determine the choice of which value to
use. The data retention current value of the SRAMs can then be added to the IBAT value of
the M41ST87Y/W to determine the total current requirements for data retention. The
available battery capacity for the battery of your choice can then be divided by this current to
determine the amount of data retention available.
For a further more detailed review of lifetime calculations, please see application note
AN1012.
2.5
Tamper detection circuit
The M41ST87Y/W provides two independent input pins, the tamper pin 1 input (TP1IN) and
tamper pin 2 input (TP2IN), which can be used to monitor two separate signals which can
result in the associated setting of the tamper bits (TB1 and/or TB2, in flag register 0Fh) if the
tamper enable bits (TEB1 and/or TEB2) are enabled, for the respective tamper 1 or tamper
2 channels. The TP1IN pin or TP2IN pin may be set to indicate a tamper event has occurred
by either 1) closing a switch to ground or VOUT (normally open), or by 2) opening a switch
that was previously closed to ground or VOUT (normally closed), depending on the state of
the TCMX bits and the TPMX bits in the tamper register (14h and/or 15h).
2.6
Tamper register bits (tamper 1 and tamper 2)
2.6.1
Tamper enable bits (TEB1 and TEB2)
When set to a logic '1,' this bit will enable the tamper detection circuit. This bit must be set to
'0' in order to clear the associated tamper bits (TBX, in 0Fh).
Note:
1
TEBX should be cleared then set again whenever the tamper detect condition is modified.
2
When servicing a tamper interrupt, the TEBx bits must be cleared to clear the TBx bits, then
set to 1 to again enable the tamper detect circuits.



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