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ST10F272Z2 数据表(PDF) 145 Page - STMicroelectronics |
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ST10F272Z2 数据表(HTML) 145 Page - STMicroelectronics |
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145 / 189 page  ST10F272Z2 Electrical characteristics 145/189 Table 67. Flash data retention characteristics Number of program / erase cycles (-40 °C ≤ TA ≤ 125 °C) Data retention time (average ambient temperature 60 °C) 256Kbyte (code store) 64Kbyte (EEPROM emulation) (1) 0 - 100 > 20 years > 20 years 1,000 - > 20 years 10,000 - 10 years 100,000 - 1 year 1. Two 64Kbyte Flash Sectors may be typically used to emulate up to 4, 8 or 16Kbyte of EEPROM. Therefore, in case of an emulation of a 16Kbyte EEPROM, 100,000 Flash Program / Erase cycles are equivalent to 800,000 EEPROM Program/Erase cycles. For an efficient use of the EEPROM Emulation please refer to dedicated Application Note document (AN2061 - “EEPROM Emulation with ST10F2xx”). Contact your local field service, local sales person or STMicroelectronics representative to get copy of such a guideline document. |
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