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MAX8563EEE 数据表(PDF) 12 Page - Maxim Integrated Products |
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MAX8563EEE 数据表(HTML) 12 Page - Maxim Integrated Products |
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12 / 15 page ![]() For the best transient response in applications with large step loads (see the Input and Output Capacitor Selection section for output capacitance requirements), use the following equations to select the compensation components: where COUT is the output capacitance and RESR is the ESR of COUT. To use a low-cost ceramic capacitor (see the Input and Output Capacitor Selection section for load-transient response characteristics), use the following equations to select the compensation components: Example OUTPUT 1 of Figure 1 is used in this example. Table 1 shows the values required to calculate the compensa- tion. The values were taken from the appropriate data sheets and Figure 1. PC Board Layout Guidelines Due to the high-current paths and tight output accuracy required by most applications, careful PC board layout is required. An evaluation kit (MAX8563EVKIT) is available to speed design. It is important to keep all traces as short as possible to maximize the high-current trace dimensions to reduce the effect of undesirable parasitic inductance. The MOSFET dissipates a fair amount of heat due to the high currents involved, especially during large input-to-output voltage differences. To dissipate the heat generated by the MOSFET, make power traces very wide with a large amount of copper area. An efficient way to achieve good power dissipation on a surface-mount package is to lay out copper areas directly under the MOSFET package on multiple layers and connect the areas through vias. Use a ground plane to minimize impedance and inductance. In addition to the usual high-power considerations, here are four tips to ensure high output accuracy: • Ensure that the feedback connection to COUT_ is short and direct. • Place the feedback resistors next to the FB pin. • Place RC and CC next to the DRV_ pin. • Ensure FB_ and DRV_ traces are away from noisy sources to ensure tight accuracy. gS x A A S Cx Vx F x S x Sx m Sx V A pF F use F C MAX C () . . . . . . . . . . ., . == = + ⎛ ⎝⎜ ⎞ ⎠⎟ + () − = 30 15 88 12 4 016 1 5 100 12 4 12 4 18 1 12 4 1 5 1 5 2500 0 90 1 2 μ μμ Ω R Rx Vx F x S x m FS x V A use C . . . . . . , . = + () + () = 59 1 5 100 12 4 18 1 1 124 15 15 599 4 620 μ μ Ω ΩΩ C Cx g gx V I C Rx C Cx g C OUT C MAX C MAX OUT OUT MAX ISS C OUT C C MAX () () _ () = + () = − 15 C VC gg R gV I C R Vx C g x R Cx g V I C OUT OUT C MAX C MAX ESR C MAX OUT OUT MAX ISS C OUT OUT C MAX ESR C C MAX OUT OUT . () () () _ () () _ = ×× × ×× + () ⎡ ⎣ ⎢ ⎢ ⎤ ⎦ ⎥ ⎥ ×+ () =× + () ×+ − 016 1 59 1 2 MAX MAX () ±1%, Ultra-Low Output Voltage, Dual and Triple Linear n-FET Controllers 12 ______________________________________________________________________________________ Table 1. Parameters Required to Calculate Compensation PARAMETER CONDITIONS VALUE UNITS MOSFET CISS VDS = 1V 2500 pF MOSFET GFS IDFS = 8.8A 30 S VOUT1 Figure 1 1.5 V IOUT_MAX Figure 1 1.5 A COUT1 Figure 1 100 µF RESR Figure 1 18 m Ω |
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