STGF19NC60HD datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

STGB19NC60HD, STGF19NC60HD, STGP19NC60HD, STGW19NC60HD

4/17

Doc ID 12819 Rev 6

Electrical characteristics

(TJ=25°C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE= 0)

IC= 1 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15 V, IC= 12 A

VGE= 15 V, IC=12 A,TJ=125 °C

1.8

1.6

2.5

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

3.75

5.75

ICES

Collector cut-off current

(VGE = 0)

VCE= 600 V

VCE= 600 V,TJ= 125 °C

150

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±20 V

±100

gfs

(1)

Pulsed: Pulse duration = 300 ìs, duty cycle 1.5%

Forward transconductance

VCE = 15 V, IC= 12 A

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

1180

130

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390 V, IC = 5 A,

VGE = 15 V,

Figure 20

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