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STGF19NC60HD 数据表(PDF) 5 Page - STMicroelectronics

部件名 STGF19NC60HD
功能描述  19 A - 600 V - very fast IGBT
PDF  17 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGF19NC60HD 数据表(HTML) 5 Page - STMicroelectronics

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STGB19NC60HD, STGF19NC60HD, STGP19NC60HD, STGW19NC60HD
Electrical characteristics
Doc ID 12819 Rev 6
5/17
Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
Figure 21
-
25
7
1600
-
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
TJ = 125 °C
Figure 21
-
24
8
1400
-
ns
ns
A/µs
tr(Voff)
td(Voff)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
Figure 21
-
27
97
73
-
ns
ns
ns
tr(Voff)
td(Voff)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
TJ = 125 °C
Figure 21
-
58
144
128
-
ns
ns
ns
Table 7.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
Eoff
(1)
Ets
1.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
Figure 21
-
85
189
274
-
µJ
µJ
µJ
Eon
Eoff
(1)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
TJ = 125 °C
Figure 21
-
187
407
594
-
µJ
µJ
µJ
Table 8.
Collector-emitter diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VF
Forward on-voltage
IF = 12 A
IF = 12 A, TJ = 125 °C
-
2.6
2.1
-
V
V
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 12 A, VR = 40 V,
di/dt = 100 A/
μs
Figure 22
-
31
30
2
-
ns
nC
A
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 12 A, VR = 40 V,
TJ =125 °C, di/dt = 100 A/µs
Figure 22
-
59
102
4
-
ns
nC
A



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