STP60N55F3 datasheet(3/20 Pages) STMICROELECTRONICS

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STx60N55F3

Electrical ratings

Doc ID 13242 Rev 4

3/20

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

DPAK/D²PAK

TO-220

IPAK/I²PAK

TO-220FP

VDS

Drain-source voltage (VGS=0)

VGS

Gate-source voltage

± 20

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

320

168

PTOT

Total dissipation at TC = 25°C

110

Derating factor

0.73

0.2

W/°C

dv/dt (2)

ISD < 80 A, di/dt < 300A/µs, VDD < V(BR)DSS. Tj < Tjmax

Peak diode recovery voltage slope

V/ns

EAS

(3)

Starting Tj=25°C, Id=32 A, Vdd= 25 V

Single pulse avalanche energy

390

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1s;TC=25°C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

DPAK

IPAK

I²PAK

D²PAK TO-220 TO-220FP

Rthj-case

Thermal resistance junction-

case max

1.36

°C/W

Rthj-pcb (1)

When mounted on FR-4 board of 1inch², 2oz Cu

Thermal resistance junction-

pcb max

°C/W

Rthj-a

Thermal resistance junction-

ambient max

100

62.5

°C/W

Maximum lead temperature

for soldering purpose

275

300

°C

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