STP60N55F3 datasheet(4/20 Pages) STMICROELECTRONICS

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Electrical characteristics

STx60N55F3

4/20

Doc ID 13242 Rev 4

Electrical characteristics

(TCASE= 25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min. Typ. Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc = 125°C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

200

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 32A

6.5

8.5

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS =25V, ID=32A

-50

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS = 25V, f = 1MHz, VGS=0

2200

500

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 27V, ID = 65A

VGS =10V

(see Figure 16)

33.5

12.5

9.5

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

Rise time

VDD = 27V, ID = 32A,

RG = 4.7Ω, VGS = 10V

(see Figure 18)

td(off)

Turn-off delay time

Fall time

VDD = 27V, ID = 32A,

RG = 4.7Ω, VGS = 10V

(see Figure 18)

11.5

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