STF13NK50Z datasheet(3/15 Pages) STMICROELECTRONICS

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STx13NK50Z

Electrical ratings

3/15

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220, TO-247

TO-220FP

VDS

Drain-source voltage (VGS = 0)

500

VGS

Gate-source voltage

± 30

Drain current (continuous)

at TC = 25 °C

11(1)

Limited only by maximum temperature allowed

Drain current (continuous)

at TC=100 °C

6.93

6.93(1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

44(1)

PTOT

Total dissipation at TC = 25 °C

140

Derating factor

1.12

0.24

W/°C

dv/dt(3)

ISD ≤ 11 A, di/dt ≤ 200 A/µs, VDD ≤ 80% V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (RMS)

from all three leads to external heat sin

(t=1 s;TC= 25 °C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

TO-247

TO-220FP

Rthj-case

Thermal resistance junction-case max

0.89

4.17

°C/W

Rthj-a

Thermal resistance junction-ambient

max

62.5

°C/W

Maximum lead temperature for

soldering purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD= 50 V)

240

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