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STF13NK50Z 数据表(PDF) 4 Page - STMicroelectronics

部件名 STF13NK50Z
功能描述  N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH™ Power MOSFET
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF13NK50Z 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STx13NK50Z
4/15
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
500
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
TC =125 °C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20 V
±
10
µA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 100 µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 6.5 A
0.4
0.48
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS =15 V, ID = 6.5 A
8.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz,
VGS=0
1600
200
45
pF
pF
pF
Coss eq
(2)
.
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0 V to 400 V
50
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=400 V, ID = 13 A
VGS =10 V
Figure 20
47
9
28
nC
nC
nC
Rg
Intrinsic gate resistance
f= 1 MHz open drain
2.3
Ω
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=400 V, ID=6.5 A,
RG=4.7 Ω, VGS=10 V
Figure 19
18
23
ns
ns
td(off)
tf
Turn-off delay time
Fall time
61
24
ns
ns



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