BSC080P03LSG datasheet(3/9 Pages) INFINEON

3 / 9 page

BSC080P03LS G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

4620

6140

Output capacitance

C oss

1430

1900

Reverse transfer capacitance

C rss

1200

1800

Turn-on delay time

t d(on)

13.5

20.3

Rise time

t r

87.0

130.5

Turn-off delay time

t d(off)

79.0

118.5

Fall time

t f

108.0

162.0

Gate Charge Characteristics

Gate to source charge

Q gs

-12.7

-16.8

Gate charge at threshold

Q g(th)

-7.1

-9.5

Gate to drain charge

Q gd

-34.3

-51.4

Switching charge

Q sw

-39.8

-58.8

Gate charge total

Q g

-92.0

-122.4

Gate plateau voltage

V plateau

-2.8

Output charge

Q oss

V DD=-15 V, V GS=0 V

25.6

34.0

Reverse Diode

Diode continous forward current

I S

30.0

Diode pulse current

I S,pulse

-120

Diode forward voltage

V SD

V GS=0 V, I F=-30 A,

T j=25 °C

-0.9

-1.2

Reverse recovery time

t rr

V R=15 V, I F=|I S|,

di F/dt =100 A/µs

-35

Reverse recovery charge

Q rr

28.0

T C=25 °C

Values

V GS=0 V, V DS=-15 V,

f =1 MHz

V DD=-15 V, V GS=-

10 V, I D=-30 A,

R G=6 Ω

V DD=-24 V, I D=30 A,

V GS=0 to -10 V

Rev. 1.04

page 3

2010-05-04

BSC080P03LSG 数据表(PDF) 3 Page - Infineon Technologies AG

BSC080P03LSG 数据表(HTML) 3 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9

数据表下载