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BSC080P03LSG 数据表(PDF) 1 Page - Infineon Technologies AG |
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BSC080P03LSG 数据表(HTML) 1 Page - Infineon Technologies AG |
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1 / 9 page ![]() BSC080P03LS G OptiMOS™-P Power-Transistor Features • P-Channel • Enhancement mode • Logic level • 150°C operating temperature • Avalanche rated; RoHS compliant • Vgs=25V, specially suited for notebook applications • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=70 °C T A=25 °C 1) Pulsed drain current I D,pulse T C=25 °C 2) Avalanche energy, single pulse E AS I D=-30 A, R GS=25 Ω mJ Gate source voltage V GS V Power dissipation P tot T C=25 °C W T A=25 °C 1) Operating and storage temperature T j, T stg °C ESD class JESD22-A114-HBM Soldering temperature IEC climatic category; DIN IEC 68-1 55/150/56 -55 ... 150 ±25 2.5 -16 89 260 °C Value 248 -120 -30 -30 1C (1kV-2kV) V DS -30 V R DS(on),max 8 m Ω I D -30 A Product Summary PG-TDSON-8 Type Package BSC080P03LS G PG-TDSON-8 Marking Lead free Packing 080P03LS Yes Dry Rev. 1.04 page 1 2010-05-04 |
类似零件编号 - BSC080P03LSG |
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类似说明 - BSC080P03LSG |
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