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SPD09P06PLG 数据表(PDF) 3 Page - Infineon Technologies AG |
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SPD09P06PLG 数据表(HTML) 3 Page - Infineon Technologies AG |
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3 / 9 page ![]() 2008-0 7-29 Rev 2.5 Page 3 SPD09P06PL G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max , ID=-5.4 1.8 3.5 - S Input capacitance Ciss VGS=0V, VDS=-25V, f =1MHz - 360 450 pF Output capacitance Coss - 103 130 Reverse transfer capacitance Crss - 40 50 Turn-on delay time td(on) VDD=-30V, VGS=-4.5V, ID=-5.4, RG=6 - 11 17 ns Rise time tr VDD=-30V, VGS=-4.5V, ID=-5.4A, RG=6 - 168 252 Turn-off delay time td(off) - 49 74 Fall time tf - 89 134 Gate Charge Characteristics Gate to source charge Qgs VDD=-48V, ID=-9.7A - 1.3 2 nC Gate to drain charge Qgd - 5.1 7.5 Gate charge total Qg VDD=-48V, ID=-9.7A, VGS=0 to -10V - 14 21 Gate plateau voltage V(plateau) VDD=-48V, ID=-9.7A - -4.1 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - -9.7 A Inverse diode direct current, pulsed ISM - - -38.8 Inverse diode forward voltage VSD VGS=0V, IF=-9.7A - -1.1 -1.4 V Reverse recovery time trr VR=-30V, IF=lS, diF/dt=100A/µs - 52 76 ns Reverse recovery charge Qrr - 64 96 nC |
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