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TLE7184F 数据表(PDF) 13 Page - Infineon Technologies AG |
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TLE7184F 数据表(HTML) 13 Page - Infineon Technologies AG |
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13 / 35 page ![]() Data Sheet 13 Rev. 1.0, 2008-12-04 TLE7184F MOSFET Driver 5.3 Bootstrap Principle The TLE7184F provides a bootstrap based supply for its high side output stages. The benefit of this principle is a fast switching of the high side switches - supporting active freewheeling in high side. The bootstrap capacitors are charged by switching on the external low side MOSFETs connecting the bootstrap capacitor to GND. Under this condition the bootstrap capacitor will be charged from the VREG capacitor. If the low side MOSFET is switched off and the high side MOSFET is switched on, the bootstrap capacitor will float together with the SHx voltage to the supply voltage of the bridge. Under this condition the supply current of the high side output stage will discharge the bootstrap capacitor. This current is specified. The size of the capacitor together with this current will determine how long the high side MOSFET can be kept on without recharging the bootstrap capacitor. When all external MOSFETs are switched off, the SHx voltage can be undefined. Under this condition, the bootstrap capacitors can be discharged, dependent on the SHx voltage. 5.4 Electrical Characteristics Electrical Characteristics MOSFET Drivers V S = 7.0 to 33 V, Tj = -40 °C to +150 °C all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. Inputs 5.4.1 Low level input voltage of ILx; IHx V I_LL ––1.6 V – 5.4.2 High level input voltage of ILx; IHx V I_HL 2.8 ––V – 5.4.3 Input hysteresis of IHx; ILx1) d VI 100 ––mV – 5.4.4 IHx pull-up resistors to VDD R IH 33.5 – 66.5 k Ω – 5.4.5 ILx pull-down resistors to GND R IL 210 – 490 k Ω – MOSFET driver output 5.4.6 Output source resistance R Sou 2–13.5 Ω Iload=20mA 5.4.7 Output sink resistance R Sink 2–9 Ω Iload=20mA 5.4.8 High level output voltage Gxx vs. Sxx V Gxx1 – 11 14 V 13,5V <=V VS<=45V 2), V IOV<=VOVIOV, V VDH<=VOVVDH I load=37,5mA 5.4.9 High level output voltage GHx vs. SHx1) V Gxx2 6––V V Vs=8V, C load=20nF, dc=94%; f PWM=20kHz 5.4.10 High level output voltage GHx vs. SHx1)3) V Gxx3 6 + V diode ––V V Vs=8V, C load=20nF, dc=94%; f PWM=20kHz; passive freewheeling |
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