IPW60R165CP_08 datasheet(3/11 Pages) INFINEON

3 / 11 page

IPW60R165CP

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

2000

Output capacitance

C oss

100

Effective output capacitance, energy

C o(er)

-83-

Effective output capacitance, time

C o(tr)

220

Turn-on delay time

t d(on)

-12-

Rise time

t r

-5

Turn-off delay time

t d(off)

-50-

Fall time

t f

-5

Gate Charge Characteristics

Gate to source charge

Q gs

-9

Gate to drain charge

Q gd

13.0

Gate charge total

Q g

-39

Gate plateau voltage

V plateau

5.0

Reverse Diode

Diode forward voltage

V SD

V GS=0 V, I F=12 A,

T j=25 °C

0.9

1.2

Reverse recovery time

t rr

390

Reverse recovery charge

Q rr

7.5

µC

Peak reverse recovery current

I rrm

-38-

1) J-STD20 and JESD22

2) Pulse width t

p limited by T j,max

4) I

SD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.

V R=400 V, I F=I S,

di F/dt =100 A/µs

5) C

o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.

6) C

o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

3) Repetitive avalanche causes additional power losses that can be calculated asP

AV=E AR*f.

Values

V GS=0 V, V DS=100 V,

f =1 MHz

V DD=400 V, V GS=10V,

I D=12 A, R G=3.3 Ω

V DD=400 V, I D=12 A,

V GS=0 to 10 V

V GS=0 V, V DS=0 V

to 480 V

Rev. 2.2

page 3

2008-02-18

Please note the new package dimensions arccording to PCN 2009-134-A

IPW60R165CP 数据表(PDF) 3 Page - Infineon Technologies AG

IPW60R165CP 数据表(HTML) 3 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11

数据表下载