IPW60R165CP_08 datasheet(2/11 Pages) INFINEON

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IPW60R165CP

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous diode forward current

I S

Diode pulse current

I S,pulse

Reverse diode dv /dt

dv /dt

V/ns

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

0.65

K/W

R thJA

leaded

Soldering temperature,

wavesoldering only allowed at leads

T sold

1.6 mm (0.063 in.)

from case for 10 s

260

°C

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=250 µA

600

Gate threshold voltage

V GS(th)

V DS=V GS, I D=0,79 mA

2.5

3.5

Zero gate voltage drain current

I DSS

V DS=600 V, V GS=0 V,

T j=25 °C

µA

V DS=600 V, V GS=0 V,

T j=150 °C

-10-

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

100

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=12 A,

T j=25 °C

0.15

0.165

Ω

V GS=10 V, I D=12 A,

T j=150 °C

0.40

Gate resistance

R G

f =1 MHz, open drain

1.9

Ω

Value

T C=25 °C

Values

Thermal resistance, junction -

ambient

Rev. 2.2

page 2

2008-02-18

Please note the new package dimensions arccording to PCN 2009-134-A

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