IPB60R199CP_09 datasheet(3/10 Pages) INFINEON

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IPB60R199CP

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

1520

Output capacitance

C oss

-72-

Effective output capacitance, energy

C o(er)

-69-

Effective output capacitance, time

C o(tr)

180

Turn-on delay time

t d(on)

-10-

Rise time

t r

-5

Turn-off delay time

t d(off)

-50-

Fall time

t f

-5

Gate Charge Characteristics

Gate to source charge

Q gs

-8

Gate to drain charge

Q gd

-11-

Gate charge total

Q g

-32

Gate plateau voltage

V plateau

5.0

Reverse Diode

Diode forward voltage

V SD

V GS=0 V, I F=9.9 A,

T j=25 °C

0.9

1.2

Reverse recovery time

t rr

340

Reverse recovery charge

Q rr

5.5

µC

Peak reverse recovery current

I rrm

-33-

1) J-STD20 and JESD22

2) Pulse width t

p limited by T j,max

3) Repetitive avalanche causes additional power losses that can be calculated asP

AV=E AR*f.

5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB

is vertical without blown air

V R=400 V, I F=I S,

di F/dt =100 A/µs

6) C

o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.

7) C

o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

4) I

SD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.

Values

V GS=0 V, V DS=100 V,

f =1 MHz

V DD=400 V,

V GS=10 V, I D=9.9 A,

R G=3.3 Ω

V DD=400 V, I D=9.9 A,

V GS=0 to 10 V

V GS=0 V, V DS=0 V

to 480 V

Rev. 2.1

page 3

2009-04-06

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