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IPB60R199CP 数据表(PDF) 1 Page - Infineon Technologies AG |
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IPB60R199CP 数据表(HTML) 1 Page - Infineon Technologies AG |
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1 / 10 page ![]() IPB60R199CP CoolMOS ® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC 1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Server and Telecom Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current 2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=6.6 A, V DD=50 V 436 mJ Avalanche energy, repetitive t AR 2),3) E AR I D=6.6 A, V DD=50 V Avalanche current, repetitive t AR 2),3) I AR A MOSFET dv /dt ruggedness dv /dt V DS=0...480 V V/ns Gate source voltage V GS static V AC (f >1 Hz) Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C ±30 139 -55 ... 150 0.66 6.6 50 ±20 Value 16 10 51 V DS @ Tj,max 650 V R DS(on),max 0.199 Ω Q g,typ 3 2 nC Product Summary Type Package Ordering Code Marking IPB60R199CP PG-TO263 SP000223256 6R199P PG-TO263 Rev. 2.1 page 1 2009-04-06 |
类似零件编号 - IPB60R199CP_09 |
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类似说明 - IPB60R199CP_09 |
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