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M48Z02 数据表(PDF) 16 Page - STMicroelectronics |
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M48Z02 数据表(HTML) 16 Page - STMicroelectronics |
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16 / 21 page ![]() DC and AC parameters M48Z02, M48Z12 16/21 Doc ID 2420 Rev 7 Table 9. Power down/up AC characteristics Table 10. Power down/up trip points DC characteristics Symbol Parameter(1) 1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where noted). Min Max Unit tPD E or W at VIH before power down 0 - µs tF (2) 2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 µs after VCC passes VPFD (min). VPFD (max) to VPFD (min) VCC fall time 300 - µs tFB (3) 3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data. VPFD (min) to VSS VCC fall time 10 - µs tR VPFD (min) to VPFD (max) VCC rise time 0 - µs tRB VSS to VPFD (min) VCC rise time 1 - µs tREC E or W at VIH after power up 2 - ms Symbol Parameter(1)(2) 1. All voltages referenced to VSS. 2. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where noted). Min Typ Max Unit VPFD Power-fail deselect voltage M48Z02 4.5 4.6 4.75 V M48Z12 4.2 4.3 4.5 V VSO Battery backup switchover voltage 3.0 V tDR (3) 3. At 25 °C, VCC = 0 V. Expected data retention time 10 YEARS |
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